HFA105NH60R

Manufacturer: Vishay Semiconductors
Diode Type: Standard
Speed: Fast Recovery = 200mA (Io)
Mounting Type: Chassis Mount
Voltage - DC Reverse (Vr) (Max): 600V
Packaging: Bulk
Diode Configuration: Single
Series: HEXFRED®
Package / Case: D-67 HALF-PAK
Supplier Device Package: HALF-PAK
Reverse Recovery Time (trr): 140ns
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 105A
Current - Reverse Leakage @ Vr: 30µA @ 600V
Current - Average Rectified (Io) (per Diode): 105A


Features:

• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters


Pinout




Specifications

	Parameters	Max	Units
VR	Cathode-to-Anode Voltage	600	V
IF @ TC = 25°C	Continuous Forward Current	147	A
IF @ TC = 100°C	Continuous Forward Current	72	A
IFSM	Single Pulse Forward Current	600	A
IAS	Maximum Single Pulse Avalanche Current	2.0
EAS	Non-Repetitive Avalanche Energy	220	mj
PD @ TC = 25°C	Maximum Power Dissipation	379	W
PD @ TC = 100°C	Maximum Power Dissipation	152	W
TJ, TSTG	Operating Junction and Storage Temperatures	- 55 to 150	°C

Description

HFA105NH60R diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These HFA105NH60R devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.