HFA08TB120S

Product : Ultra Fast Recovery Rectifiers
Mounting Style : SMD/SMT
Configuration : Single
Forward Continuous Current : 8 A
Packaging : Tube
Reverse Current IR : 10 uA
Recovery Time : 95 ns
Package / Case : D2PAK
Reverse Voltage : 1200 V
Forward Voltage Drop : 3.3 V
Max Surge Current : 130 A


Features:

• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low I_RRM
• Very Low Q_rr
• Guaranteed Avalanche
• Specified at Operating Conditions




Specifications

	Parameter	Max	Units
VR	Cathode-to-Anode Voltage	1200	V
IF @ TC = 100°C	Continuous Forward Current	8.0	A
IFSM	Single Pulse Forward Current	130
IFRM	Maximum Repetitive Forward Current	32
PD @ TC = 25°C	Maximum Power Dissipation	73.5	W
PD @ TC = 100°C	Maximum Power Dissipation	29
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to +150

Description

International Rectifier's HFA08TB120S is a state of the art ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 8 amps continuous current, the HFA08TB120S is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor.These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HFA08TB120S is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.