DIODE HEXFRED 600V 8A TO247AC
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Features: ·Ultrafast recovery time·Ultrasoft recovery·Very low IRRM·Very low Qrr·Guaranteed avalan...
Series: | - | Manufacturer: | Vishay Semiconductors | ||
Diode Type: | Standard | Voltage - DC Reverse (Vr) (Max): | 600V | ||
Current - Average Rectified (Io): | 8A | Current - Average Rectified (Io) (per Diode): | - | ||
Gate-Source Breakdown Voltage : | 30 V | Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 8A | ||
Speed: | Fast Recovery = 200mA (Io) | Reverse Recovery Time (trr): | 55ns | ||
Current - Reverse Leakage @ Vr: | 5µA @ 600V | Capacitance @ Vr, F: | - | ||
Diode Configuration: | - | Mounting Type: | Through Hole, Radial | ||
Package / Case: | TO-247-2 | Supplier Device Package: | TO-247AC Modified |
The HFA08PB60PBF is a state of the art center tap ultral fast recovery diode.Employing the lastest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by and rectifire previously avaiable.
Features of the HFA08PB60PBF are:(1)untrafast recovery ; (2)ultrasoft recovery; (3)very low Irrm; (4)very low Qrr; (5)specified at operating conditions; (6)lead-free.
The absolute maximum ratings of the HFA08PB60PBF can be summarized as:(1)cathode-to-anode voltage:600V; (2)continuous forward current:8.0A; (3)single pulse forward current:60A; (4)maximum repetitive forward current:24A; (5)maximum power dissipation:36W(Tc=25); (6)maximum power dissipation:14W(Tc=100); (7)operating junction and storage temperature range:-55~150.If you want to know more information of HFA08PB60PBF such as the electrical characteristics, please download the datasheet in www.seekic.com or www.chinaicmart.com.