HF51C120ACE

The HF51C120ACE has some electrical characteristics (wafer form).When parameter is VFM,the description is forward voltage,the guaranteed (Min/Max) is 3V Max.,the test conditions is TJ = 25,IF = 16A.When parameter is BVR,the description is reverse breakdown voltage,the guaranteed (Min/Max) is 1200V Min.,the test conditions is TJ = 25,IR = 200A.When parameter is IRM,the description is reverse leakage current,the guaranteed (Min/Max) is 20A Max.,the test conditions is TJ = 25,VR = 1200V.

The HF51C120ACE has some mechanical data.The nominal back metal composition,thickness is Cr-Ni-Ag(1 KA - 4 KA - 6 KA).The nominal front metal composition,thickness is 99% Al, 1% Si (3 microns).The chip dimensions is 0.340" x 0.195" .The wafer diameter is 125mm,with std.< 100 > flat.The wafer thickness is .015" ± .003".The relevant die mechanical dwg. number is 01-5172.The minimum street width is 100 microns.The reject ink dot size is 0.25 mm diameter minimum.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.

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