Features: ·Glass passivated chip junction.·High efficiency, Low VF·High current capability·High reliability·High surge current capability·For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.Specifications Parameter SYMBOL HERAF 1001G ...
HERAF1008G: Features: ·Glass passivated chip junction.·High efficiency, Low VF·High current capability·High reliability·High surge current capability·For use in low voltage, high frequency inventor, free wheeli...
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Parameter |
SYMBOL |
HERAF 1001G |
HERAF 1002G |
HERAF 1003G |
HERAF 1004G |
HERAF 1005G |
HERAF 1006G |
HERAF 1007G |
HERAF 1008G |
UNIT |
Maximum Recurrent Peak Reverse Voltage |
VRRM |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
V |
Maximum RMS Voltage |
VRMS |
35 |
70 |
140 |
210 |
280 |
420 |
560 |
700 |
V |
Maximum DC blocking voltage |
VDC |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
V |
Maximum average forward rectifiedCurrent .375" (9.5mm) lead length@TA =55 |
I(AV) |
10 |
A | |||||||
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) |
IFSM |
150 |
A | |||||||
Maximum Instantaneous Forward Voltage@ 2.0A |
VF |
1.0 |
1.3 |
1.7 |
V | |||||
Maximum DC Reverse Current @TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC |
IR |
10 140 |
A | |||||||
Maximum reverse recovery time (Note 1) |
Trr |
50 |
80 |
nS | ||||||
Typical Thermal resistance (Note) |
Cj |
80 |
60 |
pF | ||||||
Typical Thermal Resistance (Note 3) |
RJC |
2.0 |
/W | |||||||
Operating Temperature Range |
TJ |
-55 to +150 |
| |||||||
Storage Temperature Range |
TSTG |
-55 to +150 |