HER301G

Product :
Peak Reverse Voltage :
Forward Continuous Current :
Max Surge Current :
Configuration :
Recovery Time :
Forward Voltage Drop :
Maximum Reverse Leakage Current :
Maximum Power Dissipation :
Operating Temperature Range :
Package / Case :
Packaging :


Features:

· Glass passivated chip junction.
· High efficiency, Low VF
· High current capability
· High reliability
· High surge current capability
· For use in low voltage, high frequency inventor, free wheeling, and polarity protection application.




Specifications

Symbol	Description	HER 301G	HER 302G	THER 303G	HER 304G	HER 305G	HER 306G	HER 307G	HER 308G	Unit
VRRM	Maximum Repetitive Peak Reverse Voltage	50	100	200	300	400	600	800	1000	V
VRMS	Maximum RMS Voltage	35	70	140	210	280	420	560	700	V
VDC	Maximum DC Blking Voltage	50	100	200	300	400	600	800	1000	V
I(AV)	Maximum Average Forward Rectified Current @Tc=50	3.0								A
IFSM	Peak Forward Surge Current	125								A
VF	Isolation Voltage from case to lugs	1.0				1.3	1.7			V
IR	Maximum DC Reverse Current @TA=25 at Rated DC Blking Voltage @ TA=125	10 200								uA uA
Trr	Maximum Reverse Recovery Time ( Note 3 )	50					75
CJ	Typical Capacitance Junction(per element)(Note 3)	60					35			pF
RJA RJL	Typical Thermal Resistance (Note 3)	35 10								/W
TJ/TSTG	Storage Temperature Range	-65 to +150

Notes: 1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B

Symbol	Description	HER 301G	HER 302G	THER 303G	HER 304G	HER 305G	HER 306G	HER 307G	HER 308G	Unit
VRRM	Maximum Repetitive Peak Reverse Voltage	50	100	200	300	400	600	800	1000	V
VRMS	Maximum RMS Voltage	35	70	140	210	280	420	560	700	V
VDC	Maximum DC Blking Voltage	50	100	200	300	400	600	800	1000	V
I(AV)	Maximum Average Forward Rectified Current @Tc=50	3.0								A
IFSM	Peak Forward Surge Current	125								A
VF	Isolation Voltage from case to lugs	1.0				1.3	1.7			V
IR	Maximum DC Reverse Current @TA=25 at Rated DC Blking Voltage @ TA=125	10 200								uA uA
Trr	Maximum Reverse Recovery Time ( Note 3 )	50					75
CJ	Typical Capacitance Junction(per element)(Note 3)	60					35			pF
RJA RJL	Typical Thermal Resistance (Note 3)	35 10								/W
TJ/TSTG	Storage Temperature Range	-65 to +150

Notes: 1. Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B