Position: Home  > All Categories> Integrated Circuits (ICs) > HEMT-1001

HEMT-1001

Features: • Nonsaturating, High Radiant Flux Output• Efficient at Low Currents, Combined with High Current Capability• Three Package Styles• Operating Temperature Range -55°C to +100°C• Medium-Wide Radiation Patterns• Radiated Spectrum Matches Response of Silico...

product image

HEMT-1001 Picture
See larger image
SeekIC No. : 004361438 Detail

HEMT-1001: Features: • Nonsaturating, High Radiant Flux Output• Efficient at Low Currents, Combined with High Current Capability• Three Package Styles• Operating Temperature Range -55°C...

HEMT-1001 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
HEMT-1001
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Nonsaturating, High Radiant Flux Output
• Efficient at Low Currents, Combined with High Current Capability
• Three Package Styles
• Operating Temperature Range -55°C to +100°C
• Medium-Wide Radiation Patterns
• Radiated Spectrum Matches Response of Silicon Photodetectors


Specifications

Power Dissipation .................................................................... 150 mW
DC Forward Current ..................................................................100 mA
(Derate as specified in Figure 6)
Peak Forward Current .............................................................1000 mA
(Time average current as determined from Figure 7)
IRED Junction Temperature ......................................................... 110
Operating and Storage Temperature ........................... -55 to +100
Lead Soldering Temperature................................... 260for 5 seconds
(1.6 mm (0.063 in.) from emitter body)


Description

The HEMT-3301 and HEMT-1001 are infrared emitters, using a mesa structure GaAs on GaAs infrared diode, IRED, optimized for maximum quantum efficiency at a peak wavelength of 940 nm. The HEMT-3301 and HEMT-1001 emitters are untinted, undiffused plastic packages with mediumwide radiation patterns. These medium-wide and wide radiation patterns eliminate the beam focusing problems that are encountered with emitters that have narrow radiation patterns. Applications include optical transducers, optical part counters, smoke detectors, covert identification, paper tape and card readers, and optical encoders.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Transformers
TM-09210
BV222-1-00992
Optoelectronics
SFH7770
TLP423J
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Tapes, Adhesives
803
AC452-2
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more