Features: · High efficiency, high outputSpecifications Item Symbol Rated Value Units Forward current IF 250 mA Reverse voltage VR 3 V Operating temperature Topr 20 to +60 Storage temperature Tstg 40 to +90 DescriptionThe HE8404SG is a GaAlAs double heterojunction s...
HE8404SG: Features: · High efficiency, high outputSpecifications Item Symbol Rated Value Units Forward current IF 250 mA Reverse voltage VR 3 V Operating temperature Topr 20 to +60 ...
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Item | Symbol | Rated Value | Units |
Forward current | IF | 250 | mA |
Reverse voltage | VR | 3 | V |
Operating temperature | Topr | 20 to +60 | |
Storage temperature | Tstg | 40 to +90 |
The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.