Features: · High efficiency and high output powerSpecifications Item Symbol Rated Value Units Forward current IF 250 mA Reverse voltage VR 3 V Operating temperature Topr 20 to +60 Storage temperature Tstg 40 to +90 DescriptionThe HE7601SG is a 770 nm band GaAlAs in...
HE7601SG: Features: · High efficiency and high output powerSpecifications Item Symbol Rated Value Units Forward current IF 250 mA Reverse voltage VR 3 V Operating temperature Topr 20 ...
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Item | Symbol | Rated Value | Units |
Forward current | IF | 250 | mA |
Reverse voltage | VR | 3 | V |
Operating temperature | Topr | 20 to +60 | |
Storage temperature | Tstg | 40 to +90 |
The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.