HE7601SG

Features: · High efficiency and high output powerSpecifications Item Symbol Rated Value Units Forward current IF 250 mA Reverse voltage VR 3 V Operating temperature Topr 20 to +60 Storage temperature Tstg 40 to +90 DescriptionThe HE7601SG is a 770 nm band GaAlAs in...

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SeekIC No. : 004361199 Detail

HE7601SG: Features: · High efficiency and high output powerSpecifications Item Symbol Rated Value Units Forward current IF 250 mA Reverse voltage VR 3 V Operating temperature Topr 20 ...

floor Price/Ceiling Price

Part Number:
HE7601SG
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/26

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Product Details

Description



Features:

· High efficiency and high output power


Specifications

Item Symbol Rated Value Units
Forward current IF 250 mA
Reverse voltage VR 3 V
Operating temperature Topr 20 to +60
Storage temperature Tstg 40 to +90



Description

The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.




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