HDD32M72B9

Features: • Part Identification HDD32M72B9 16B : 166MHz (CL=2.5) HDD32M72B9 13A : 133MHz (CL=2) HDD32M72B9 13B : 133MHz (CL=2.5)• 256MB(32Mx64) Unbuffered DDR SO-DIMM based on 32Mx8 DDR SDRSM with ECC• 2.5V ± 0.2V VDD and VDDQ power supply• Auto & self refresh capabi...

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SeekIC No. : 004360849 Detail

HDD32M72B9: Features: • Part Identification HDD32M72B9 16B : 166MHz (CL=2.5) HDD32M72B9 13A : 133MHz (CL=2) HDD32M72B9 13B : 133MHz (CL=2.5)• 256MB(32Mx64) Unbuffered DDR SO-DIMM based on 32Mx8 D...

floor Price/Ceiling Price

Part Number:
HDD32M72B9
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

• Part Identification
   HDD32M72B9 16B : 166MHz (CL=2.5)
   HDD32M72B9 13A : 133MHz (CL=2)
   HDD32M72B9 13B : 133MHz (CL=2.5)
• 256MB(32Mx64) Unbuffered DDR SO-DIMM based on 32Mx8 DDR SDRSM with ECC
• 2.5V ± 0.2V VDD and VDDQ power supply
• Auto & self refresh capability (8192 Cycles/64ms)
• All input and output are compatible with SSTL_2 interface
• Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock
• All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock
• MRS cycle with address key programs
   - Latency (Access from column address) : 2, 2.5
   - Burst length : 2, 4, 8
   - Burst type : Sequential & Interleave
• Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock
• All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock
• The used device is 8M x 8bit x 4Banks DDR SDRAM
• Auto & Self refresh, 7.8us refresh interval (8K/64ms refresh)
• Serial Presence detect with EEPROM



Specifications

Parameter Symbol Value Units
Voltage on any pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD supply relative to VSS VDD -1.0 ~ 34.6 V
Voltage on VDDQ supply relative to Vss VDDQ -0.5 ~ 3.6 V
Storage Temperature TSTG -55 ~ +150
Power Dissipation PD 8.0 W
Short Circuit Current IOS 50 mA

Notes : Permanent device damage may occur if ABSOLUTE MAXIUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.



Description

The HDD32M72B9 is a 32M x 72 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module.
The HDD32M72B9 module consists of nine CMOS 32M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K
EEPROM in 8-pin TSSOP package on a 200-pin glass-epoxy. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM. The HDD32M72B9 is a SO-DIMM(Small Outline Dual in line Memory
Module) .Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. All module components may be powered from a single 2.5V DC power supply and all inputs and outputs are SSTL_2 compatible.




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