Features: • Part IdentificationHDD16M72D9W 10A : 100MHz (CL=2)HDD16M72D9W 13A : 133MHz (CL=2)HDD16M72D9W 13B : 133MHz (CL=2.5)• Power supply : VDD: 2.5V ± 0.2V, VDDQ: 2.5V ± 0.2V• Double-data-rate architecture; two data transfers per clock cycle• Bidirectional data strob...
HDD16M72D9W: Features: • Part IdentificationHDD16M72D9W 10A : 100MHz (CL=2)HDD16M72D9W 13A : 133MHz (CL=2)HDD16M72D9W 13B : 133MHz (CL=2.5)• Power supply : VDD: 2.5V ± 0.2V, VDDQ: 2.5V ± 0.2V̶...
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PARAMETER |
Symbol |
RATING |
Units |
Voltage on any pin relative to VSS |
VIN, VOUT |
-0.5 ~ 3.6 |
V |
Voltage on VCC supply relative to VSS |
VDD |
-1.0 ~ 3.6 |
V |
Voltage on VDDQ supply relative to Vss |
VDDQ |
-0.5 ~ 3.6 |
V |
Storage temperature |
TSTG |
-55 ~ +150 |
|
Power dissipation |
PD |
13.5 |
W |
Short circuit current |
IOS |
50 |
mA |
The HDD16M72D9W is a 64M x 72 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of nine CMOS 16M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K EEPROM in 8-pin TSSOP package on a 184-pin glass-epoxy. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM. The HDD16M72D9W is a DIMM(Dual in line Memory odule) .Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. All module components may be powered from a single 2.5V DC power supply and all inputs and outputs are SSTL_2 compatible.