HDD16M64B8

Features: • Part IdentificationHDD16M64B8 10A : 100MHz (CL=2)HDD16M64B8 13A : 133MHz (CL=2)HDD16M64B8 13B : 133MHz (CL=2.5)• 128MB(16Mx64) Unbuffered DDR SO-DIMM based on 16Mx8 DDR SDRSM• 2.5V ± 0.2V VDD and VDDQ power supply• Auto & self refresh capability (4096 Cyc...

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SeekIC No. : 004360829 Detail

HDD16M64B8: Features: • Part IdentificationHDD16M64B8 10A : 100MHz (CL=2)HDD16M64B8 13A : 133MHz (CL=2)HDD16M64B8 13B : 133MHz (CL=2.5)• 128MB(16Mx64) Unbuffered DDR SO-DIMM based on 16Mx8 DDR SD...

floor Price/Ceiling Price

Part Number:
HDD16M64B8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Part Identification
HDD16M64B8 10A : 100MHz (CL=2)
HDD16M64B8 13A : 133MHz (CL=2)
HDD16M64B8 13B : 133MHz (CL=2.5)
• 128MB(16Mx64) Unbuffered DDR SO-DIMM based on 16Mx8 DDR SDRSM
• 2.5V ± 0.2V VDD and VDDQ power supply
• Auto & self refresh capability (4096 Cycles/64ms)
• All input and output are compatible with SSTL_2 interface
• Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock
• All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock
• MRS cycle with address key programs
- Latency (Access from column address) : 2, 2.5
- Burst length : 2, 4, 8
- Data scramble : Sequential & Interleave
• Data(DQ), Data strobes and write masks latched on the rising and falling edges of the clock
• All Addresses and control inputs except Data(DQ), Data strobes and Data masks latched on the rising edges of the clock
• The used device is 4M x 8bit x 4Banks DDR SDRAM




Specifications

Voltage on any pin relative to Vss VIN, VOUT....... -0.5 ~ 3.6 V
Voltage on VDD supply relative to Vss VDD.......... -1.0 ~ 3.6 V
Voltage on VDDQ supply relative to Vss VDDQ .....-0.5 ~ 3.6 V
Storage temperature TSTG ...............................-55 ~ +150
Power dissipation PD ....................................................8.0 W
Short circuit current IOS ...............................................50 mA
Notes: Operation at above absolute maximum rating can adversely affect device reliability



Description

The HDD16M64B8 is a 16M x 64 bit Double Data Rate(DDR) Synchronous Dynamic RAM high-density memory module. The module consists of eight CMOS 16M x 8 bit with 4banks DDR SDRAMs in 66pin TSOP-II 400mil packages and 2K EEPROM in 8-pin TSSOP package on a 200-pin glass-epoxy. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM. The HDD16M64B8 is a SO-DIMM(Small Outline Dual in line Memory Module) .Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable latencies and burst lengths allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. All HDD16M64B8 module components may be powered from a single 2.5V DC power supply and all inputs and outputs are SSTL_2 compatible.




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