Features: • 3 Micron Radiation Hardened SOS CMOS• Total Dose 200K RAD (Si)• SEP Effective LET No Upsets: >100 MEV-cm2/mg• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ)• Dose Rate Survivability: >1 x 1012 RAD (Si)/s• Dose Rate Upset ...
HCTS93MS: Features: • 3 Micron Radiation Hardened SOS CMOS• Total Dose 200K RAD (Si)• SEP Effective LET No Upsets: >100 MEV-cm2/mg• Single Event Upset (SEU) Immunity < 2 x 10-9 E...
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Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . ..-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . ..±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . .±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . .-65 to +150
Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . +265
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . .+175
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
The Intersil HCTS93MS is a Radiation Hardened 4-bit binary ripple counter consisting of four master-slave flip-flops internally connected to provide a divide-by-two and a divideby-eight section. Each section has a separate clock input.
The HCTS93MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.