Features: • 3 Micron Radiation Hardened CMOS SOS• Total Dose 200K RAD (Si)• Dose Rate Survivability >1012 RAD (Si)/s (20ns Pulse)• Dose Rate Upset >1010 RAD (Si)/s (20ns Pulse)• Single Event Ray Upset Rate < 2 x 10-9 Errors/Bit Day (Typ)• LET Threshold ...
HCTS164MS: Features: • 3 Micron Radiation Hardened CMOS SOS• Total Dose 200K RAD (Si)• Dose Rate Survivability >1012 RAD (Si)/s (20ns Pulse)• Dose Rate Upset >1010 RAD (Si)/s (20n...
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Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . ±10mA
DC Drain Current, Any One Output. . . . . . . . . . . . . . . . .. . ±25mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG). . . . . . . . .. . . -65 to +150
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . +265
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . +175
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
The Intersil HCTS164MS is a radiation hardened 8-bit Serial-In/ Parallel-Out Shift Register with asynchronous reset.
The HCTS164MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family.