HCTS10KMSR

The HCTS10KMSR is one of the HCTS10MS series.The Intersil HCTS10KMSR is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state.The HCTS10KMSR utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radia-tion hardened, high-speed, CMOS/SOS Logic Family.

Features of the HCTS10KMSR are:(1)3 Micron Radiation Hardened SOS CMOS; (2)Total Dose 200K RAD (Si); (3)SEP Effective LET No Upsets: >100 MEV-cm2/mg; (4)Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day(Typ); (5)Dose Rate Survivability: >1 x 1012 RAD (Si)/s; (6)Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse; (7)Latch-Up Free Under Any Conditions; (8)Military Temperature Range: -55oC to +125oC; (9)Signi?cant Power Reduction Compared to LSTTL ICs; (10)DC Operating Voltage Range: 4.5V to 5.5V;LSTTL Input Compatibility;VIL = 0.8V Max;VIH = VCC/2 Min; (11)Input Current Levels Ii 5A at VOL, VOH.

The absolute maximum ratings of the HCTS10KMSR can be summarized as:(1)Supply Voltage:-0.5V to +7.0V; (2)Input Voltage Range, All Inputs :-0.5V to VCC +0.5V; (3)DC Input Current, Any One Input:±10mA; (4)DC Drain Current, Any One Output :±25mA(All Voltage Reference to the VSS Terminal); (5)Storage Temperature Range (TSTG) : -65oC to +150oC; (6)Lead Temperature (Soldering 10sec):+265oC; (7)Junction Temperature (TJ):+175oC; (8)ESD Classification:Class 1.If you want to know more information such as the electrical characteristics of HCTS10KMSR, please download the datasheet in www.seekic.com or www.chinaicmart.com.