Features: • 3 Micron Radiation Hardened SOS CMOS• Total Dose 200K RAD (Si)• SEP Effective LET No Upsets: >100 MEV-cm2/mg• Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)• Dose Rate Survivability: >1 x 1012 RAD (Si)/s• Dose Rate Upset &...
HCS05D: Features: • 3 Micron Radiation Hardened SOS CMOS• Total Dose 200K RAD (Si)• SEP Effective LET No Upsets: >100 MEV-cm2/mg• Single Event Upset (SEU) Immunity < 2 x 10-9 E...
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The Intersil HCS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state. The HCS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS10MS is supplied in a 14 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).