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HCPMEM-512

Features: - VTTL compatible inputs and outputs- 10 bit Column addressing- Single 3.3V +/- .3 power supply- Buffered Address and Control lines- Mezzanine stackingAccess time: 60 ns (max)- Power dissipation* Active: 7.5 W (max)* Standby : 400 mW (max) (CMOS interface)- EDO page mode capability- CAS-...

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SeekIC No. : 004359799 Detail

HCPMEM-512: Features: - VTTL compatible inputs and outputs- 10 bit Column addressing- Single 3.3V +/- .3 power supply- Buffered Address and Control lines- Mezzanine stackingAccess time: 60 ns (max)- Power dissi...

HCPMEM-512 Data Sheet

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Part Number:
HCPMEM-512
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

- VTTL compatible inputs and outputs
- 10 bit Column addressing
- Single 3.3V +/- .3 power supply
- Buffered Address and Control lines
- Mezzanine stackingAccess time: 60 ns (max)
- Power dissipation
* Active: 7.5 W (max)
* Standby : 400 mW (max) (CMOS interface)
- EDO page mode capability
- CAS-before-RAS refreshRefresh cycles
- FR4-PCB design
- Application : Sun Microsystem CP 1400/1500
• The used device is HM5113165F-6


Description

The HCPMEM-512 is a 32M x 144 bit Dynamic RAM high-density module, organized with four banks of 8M x 144 bits.

The HCPMEM-512 consists of thirty six 8M x 16, 4K refresh DRAMs in TSOPII packages, five 16 bit buffer/drivers and one PLD. The PLD controls the WRITE Enable and Output Enable signals to the DRAMS. Connectors on each side of the module allow two memories to mated together.




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