HCPL-M454_1232335

• Function Compatible with
HCPL-4504
• Surface Mountable
• Very Small, Low Profile
JEDEC Registered
Package Outline
• Compatible with Infrared
Vapor Phase Reflow and
Wave Soldering Processes
• Short Propagation Delays
for TTL and IPM
Applications
• Very High Common Mode Transient Immunity:Guaranteed 15 kV/µs at V_CM = 1500 V
• High CTR: >25% at  25°C
• Guaranteed Specifications for Common IPM Applications
• TTL Compatible
• Guaranteed ac and dc Performance Over Temperature: 0°C to 70°C
• Open Collector Output
• Recognized Under the Component Program of U.L. (File No. E55361) for Dielectric Withstand Proof Test Voltage of 3750 Vac. 1 Minute
• Lead Free Option "-000E"

• Inverter Circuits and Intelligent Power Module (IPM) Interfacing - Shorter propagation delays and guaranteed (tPLH - tPHL) specifications. (See Power Inverter Dead Time section).
• High Speed Logic Ground Isolation - TTL/TTL, TTL/LTTL, TTL/CMOS, TTL/LSTTL
• Line Receivers - High com-mon mode transient immunity (>15 kV/µs for a TTL load/drive) and low input-output capacitance (0.6 pF).
• Replace Pulse Trans-formers - Save board space and weight
• Analog Signal Ground Isolation - Integrated photon detector provides improved linearity over phototransistors

The HCPL-M454 is similar to Agilent's other high speed transistor output optocouplers but with shorter propagation delays and higher CTR. The HCPL-M454 also has a guaranteed propagation delay difference (tPLH - tPHL). These features make the HCPL-M45 an excellent solution to IPM inverter dead time and other switching problems.

The HCPL-M454 CTR, propaga-tion delays, and CMR are specified both for TTL load and drive conditions and for IPM (Intelligent Power Module) load and drive conditions. Specifica-tions and typical performance plots for both TTL and IPM conditions are provided for ease of application.

This HCPL-M454 diode-transistor optocoupler uses an insulating layer between the light emitting diode and an integrated photon detector to provide electrical insulation between input and output.Separate connections for the photodiode bias and output transistor collector increase the speed up to a hundred times over that of a conventional photo- transistor coupler by reducing the base-collector capacitance.the light emitting diode and an integrated photon detector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output transistor collector increase the speed up to a hundred times over that of a conventional photo-transistor coupler by reducing the base-collector capacitance.the light emitting diode and an integrated photon detector to provide electrical insulation between input and output.Separate connections for the photodiode bias and output transistor collector increase the speed up to a hundred times over that of a conventional photo-transistor coupler by reducing the base-collector capacitance.