HCC/HCF4030B

Features:

`MEDIUM-SPEED OPERATION tPHL = tPLH = 60ns (typ.)@ CL = 50pF and V<sub>DD</sub> V<sub>SS</sub> = 10V
`LOW OUTPUT IMPEDANCE : 500W (typ.) @ V_DD V_SS = 10V
`QUIESCENT CURRENT SPECIFIED TO 20V OR HCC DEVICE
`STANDARDIZED SYMMETRICAL OUTPUT HARACTERISTICS
`5V, 10V, AND 15V PARAMETRIC RATINGS
`INPUT CURRENTOF 100nA AT 18V AND 25°C OR HCC DEVICE
`100% TESTEDFOR QUIESCENT CURRENT
`MEETSALLREQUIREMENTSOFJEDECTENTATIVESTANDARDN°13A, "STANDARD SPECIFICATIONS OR DESCRIPTION OF "B"SERIESCMOS DEVICES"


Pinout




Specifications

Symbol	Rating	Value	Unit
VDD*	Supply Voltage : HCC Types HCF Types	0.5 to + 20 0.5 to + 18	V V
Vi	Input Voltage	0.5 to VDD + 0.5	V
II	DC Input Current (any one input)	± 10	mA
Ptot	Total Power Dissipation (per package) Dissipation per Output Transistor for Top = Full Package-temperature Range	200 100	mW mW
Top	Operating Temperature : HCC Types HCF Types	55 to + 125 40 to + 85	°C °C
Tstg	Storage Temperature	65 to + 150	°C

Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.


Description

In the HCC/HCF4030B series, the HCC4030B (extended temperature range) and HCF4030B (intermediate temperature range) are monolithic integrated circuit, available in 14-lead dual in-line plastic or ceramic package and plastic micro package.

The HCC/HCF4030B types consist of four independent exclusive-OR gates integrated on a single monolithic silicon chip. Each exclusive-OR gate consists of four n-channel and four p-channel enhancement- type transistors. All inputs and outputs are protected against electrostatic effects.