HCC240

Input Type :
Maximum Collector Emitter Voltage :
Maximum Collector Emitter Saturation Voltage :
Isolation Voltage :
Current Transfer Ratio :
Maximum Forward Diode Voltage :
Maximum Collector Current :
Maximum Power Dissipation :
Maximum Operating Temperature :
Minimum Operating Temperature :
Package / Case :
Packaging :


Features:

`Surface mountable on ceramic or printed circuit board
`Miniature package saves circuit board area
`Electrical performance similar to 4N22A and 4N24A
`Hermetically sealed
`Screened per MIL-PRF-19500 TX and TXV equivalent levels or per ESA 5000


Specifications

Input- to- Output Iso lation Volt age . . . . . . . . . . . . . . . . . . . . . . . . . ..±1.0 kVDC⁽¹⁾
Operating Tem perature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +125
Storage Tem perature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150
Soldering Tem perature (va por phase re flow for 30 sec.) . . . . . . . . . . . . . . . . 215
Soldering Tem perature (heated collet for 5 sec.) . . . . . . . . . . . . . . . . . . . . . . . 260
In put Di ode
For ward DC Cur rent (65o C be low) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA
Re verse Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 2.0 V
Power Dis sipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 mW⁽²⁾
Out put Pho to tran sis tor
Continuous Col lector Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . 50 mA
Collector- Emitter Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .. . 30 V⁽³⁾
Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . 5.0 V⁽⁴⁾
Power Dis sipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  300 mW⁽⁵⁾
Notes:
(1) Measured with inputs shorted together and outputs shorted together.
(2) Derate linearly 1.0 mW/ above 65.
(3) HCC240HV and HCC242HV are available rated at 55 V minimum.
(4) HCC240HV and HCC242HV are available rated at 7.0 V minimim.
(5) Derate linearly 3.0 mW/o C above 25.
(6) Some deviations from ESA 5000 apply. See page 13-4 for details.


Description

The HCC240 and HCC242 are optically coupled isolators, consisting of a gallium aluminum arsenide LED and a silicon phototransistor mounted and coupled in a miniature surface mount hermetic leadless chip carrier. The  HCC240 and HCC242 are identical except for the DC current transfer ratio. Electrical parameters are similar to the JEDEC registered 4N22A and 4N24A. These solid state couplers are ideal for designs where board space and device weight are important design considerations. Typical screening and lot acceptance tests are provided on page 13-4. The burn-in condition is VCE = 9 V, PD = 275 mW, IF = 20-50 mA (adjusted to achieve PD). No HTRB is performed on this device.