HC6856

Features: RADIATION• Fabricated with RICMOS™ IV Bulk 0.8 m Process (Leff = 0.65 m)• Total Dose Hardness through 1x106 rad(SiO2)• Neutron Hardness through 1x1014 cm-2• Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s• Soft Error Rate of <1x1...

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SeekIC No. : 004359440 Detail

HC6856: Features: RADIATION• Fabricated with RICMOS™ IV Bulk 0.8 m Process (Leff = 0.65 m)• Total Dose Hardness through 1x106 rad(SiO2)• Neutron Hardness through 1x1014 cm-2• D...

floor Price/Ceiling Price

Part Number:
HC6856
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

RADIATION
• Fabricated with RICMOS™ IV Bulk 0.8 m Process (Leff = 0.65 m)
• Total Dose Hardness through 1x106 rad(SiO2)
• Neutron Hardness through 1x1014 cm-2
• Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s
• Soft Error Rate of <1x10-10 upsets/bit-day
• Dose Rate Survivability through 1x1012 rad(Si)/s
• Latchup Free
OTHER
• Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V
• Read/Write Cycle Times
30 ns (Typical)
40 ns (-55 to 125°C)
• Standby Current of 20 A (typical)
• Asynchronous Operation
• CMOS or TTL Compatible I/O
• Single 5 V ± 10% Power Supply
• Packaging Options
- 36-Lead Flat Pack (0.630 in. x 0.650 in.)
- 28-Lead Flat Pack (0.530 in. x 0.720 in.)
- 28-Lead DIP, MIL-STD-1835, CDIP2-T28



Specifications

Symbol
Parameter
Min
Max
Unit
VDD
Positive Supply Voltage
-0.5
7.0
V
VPIN
Voltage on Any Pin
-0.5
VDD+0.5
V
TSTORE
Storage Temperature (Zero Bias)
-65
150
TSOLDER
Soldering Temperature`Time
270`5
PD
Total Package Power Dissipation
2.5
W
IOUT
DC or Average Output Current
25
mA
VPROT
ESD Input Protection Voltage
2000
V
JC
Thermal Resistance (Jct-to-Case) 28 FP/36 FP
2
/W
28 DIP
10
/W
TJ
Junction Temperature
175



Description

The HC6856 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 x 8-bit static random access memory with industry-standard functionality. HC6856 is fabricated with Honeywell's radiation hardened technology, and is designed for use in systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ± 10% power supply. The HC6856  RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 50 mW/MHz in operation, and less than 5 mW/MHz in the low power disabled mode. The RAM read operation is fully asynchronous, with an associated typical access time of 20 ns.

Honeywell's enhanced RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of
advanced and proprietary design, layout, and process hardening techniques. The RICMOS™ IV process is a 5-volt, twin-well CMOS technology with a 170 Å gate oxide and a minimum drawn feature size of 0.8 m (0.65 m effective gate length-Leff). Additional features of HC6856 include a three layer interconnect metalization and a lightly doped drain (LDD) structure for improved short channel reliability. High resistivity cross-coupled polysilicon resistors have been incorporated for single event upset hardening.




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