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HBDM60V600W-7

Transistors Bipolar (BJT) 200mW Half H-Bridge

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SeekIC No. : 00205889 Detail

HBDM60V600W-7: Transistors Bipolar (BJT) 200mW Half H-Bridge

HBDM60V600W-7 Data Sheet

floor Price/Ceiling Price

US $ .12~.26 / Piece | Get Latest Price
Part Number:
HBDM60V600W-7
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.26
  • $.21
  • $.14
  • $.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Quick Details

Transistor Polarity : NPN, PNP Collector- Emitter Voltage VCEO Max : 65 V at NPN, 60 V at PNP
Emitter- Base Voltage VEBO : 6 V at NPN, 5.5 V at PNP Maximum DC Collector Current : 0.5 A at NPN, 0.6 A at PNP
DC Collector/Base Gain hfe Min : 50 Configuration : Dual
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-363
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Dual
Package / Case : SOT-363
Maximum Operating Frequency : 100 MHz (Min)
DC Collector/Base Gain hfe Min : 50
Transistor Polarity : NPN, PNP
Collector- Emitter Voltage VCEO Max : 65 V at NPN, 60 V at PNP
Emitter- Base Voltage VEBO : 6 V at NPN, 5.5 V at PNP
Maximum DC Collector Current : 0.5 A at NPN, 0.6 A at PNP


Parameters:

Technical/Catalog InformationHBDM60V600W-7
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Transistor TypeNPN + PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)60V, 65V
Current - Collector (Ic) (Max)600mA, 500mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce-
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Frequency - Transistion100MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-363
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HBDM60V600W 7
HBDM60V600W7
HBDM60V600WDITR ND
HBDM60V600WDITRND
HBDM60V600WDITR



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