Transistors Bipolar (BJT) 200mW Half H-Bridge
HBDM60V600W-7: Transistors Bipolar (BJT) 200mW Half H-Bridge
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Features: · Epitaxial Planar Die Construction· Lead Free By Design/RoHS Compliant (Note 1)· Green...
Transistor Polarity : | NPN, PNP | Collector- Emitter Voltage VCEO Max : | 65 V at NPN, 60 V at PNP |
Emitter- Base Voltage VEBO : | 6 V at NPN, 5.5 V at PNP | Maximum DC Collector Current : | 0.5 A at NPN, 0.6 A at PNP |
DC Collector/Base Gain hfe Min : | 50 | Configuration : | Dual |
Maximum Operating Frequency : | 100 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-363 |
Packaging : | Reel |
Technical/Catalog Information | HBDM60V600W-7 |
Vendor | Diodes Inc |
Category | Discrete Semiconductor Products |
Transistor Type | NPN + PNP (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 60V, 65V |
Current - Collector (Ic) (Max) | 600mA, 500mA |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | - |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Frequency - Transistion | 100MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SOT-363 |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | HBDM60V600W 7 HBDM60V600W7 HBDM60V600WDITR ND HBDM60V600WDITRND HBDM60V600WDITR |