HBDM60V600W-7

Transistors Bipolar (BJT) 200mW Half H-Bridge

product image

HBDM60V600W-7 Picture
SeekIC No. : 00205889 Detail

HBDM60V600W-7: Transistors Bipolar (BJT) 200mW Half H-Bridge

floor Price/Ceiling Price

US $ .12~.26 / Piece | Get Latest Price
Part Number:
HBDM60V600W-7
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.26
  • $.21
  • $.14
  • $.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/18

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : NPN, PNP Collector- Emitter Voltage VCEO Max : 65 V at NPN, 60 V at PNP
Emitter- Base Voltage VEBO : 6 V at NPN, 5.5 V at PNP Maximum DC Collector Current : 0.5 A at NPN, 0.6 A at PNP
DC Collector/Base Gain hfe Min : 50 Configuration : Dual
Maximum Operating Frequency : 100 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-363
Packaging : Reel    

Description

Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Configuration : Dual
Package / Case : SOT-363
Maximum Operating Frequency : 100 MHz (Min)
DC Collector/Base Gain hfe Min : 50
Transistor Polarity : NPN, PNP
Collector- Emitter Voltage VCEO Max : 65 V at NPN, 60 V at PNP
Emitter- Base Voltage VEBO : 6 V at NPN, 5.5 V at PNP
Maximum DC Collector Current : 0.5 A at NPN, 0.6 A at PNP


Parameters:

Technical/Catalog InformationHBDM60V600W-7
VendorDiodes Inc
CategoryDiscrete Semiconductor Products
Transistor TypeNPN + PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)60V, 65V
Current - Collector (Ic) (Max)600mA, 500mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce-
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Frequency - Transistion100MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-363
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HBDM60V600W 7
HBDM60V600W7
HBDM60V600WDITR ND
HBDM60V600WDITRND
HBDM60V600WDITR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
Static Control, ESD, Clean Room Products
Power Supplies - External/Internal (Off-Board)
Line Protection, Backups
View more