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HBD437D

Specifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage(IE=0) 45 V VCES Collector to emitter voltage(VBE=0) 45 V VCEO Collector-to-Emitter Voltage(IB=0) 45 V VEBO Emitter to base voltage(IC=0) 8 V ICM Collector Peak Current (t10ms) 4 A IC...

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SeekIC No. : 004359073 Detail

HBD437D: Specifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage(IE=0) 45 V VCES Collector to emitter voltage(VBE=0) 45 V VCEO Collector-to-Emitter Voltage(IB=0) 4...

HBD437D Data Sheet

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Part Number:
HBD437D
Supply Ability:
5000

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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/18

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Product Details

Description



Specifications

SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage(IE=0) 45 V
VCES Collector to emitter voltage(VBE=0) 45 V
VCEO Collector-to-Emitter Voltage(IB=0) 45 V
VEBO Emitter to base voltage(IC=0) 8 V
ICM Collector Peak Current (t10ms) 4 A
IC Collector current 7 A
IB Base Current 1 A
PC Total Dissipation at TC=25°C
TA=25°C		 20
1.5		 W
Tj Max. Operating Junction Temperature 150
Tstg Storage temperature 55to~150



Description

The HBD437D is silison epitaxial-base NPN power transistor in TO-126ML plastic package, intented for use in medium power linear and switching applications. The complementary PNP type is HBD438D.




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