HB54R1G9F2U-B75B

Features: • 184-pin socket type package (dual lead out) Outline: 133.35mm (Length) * 30.48mm (Height) *4.80mm (Thickness) Lead pitch: 1.27mm• 2.5V power supply (VCC/VCCQ)• SSTL-2 interface for all inputs and outputs• Clock frequency: 143MHz/133MHz/125MHz (ma...

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HB54R1G9F2U-B75B Picture
SeekIC No. : 004358873 Detail

HB54R1G9F2U-B75B: Features: • 184-pin socket type package (dual lead out) Outline: 133.35mm (Length) * 30.48mm (Height) *4.80mm (Thickness) Lead pitch: 1.27mm• 2.5V power supply (VCC/VCCQ)...

floor Price/Ceiling Price

Part Number:
HB54R1G9F2U-B75B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

• 184-pin socket type package (dual lead out)
 Outline: 133.35mm (Length) * 30.48mm (Height) *
4.80mm (Thickness)
 Lead pitch: 1.27mm
• 2.5V power supply (VCC/VCCQ)
• SSTL-2 interface for all inputs and outputs
• Clock frequency: 143MHz/133MHz/125MHz (max.)
• Data inputs and outputs are synchronized with DQS
• 4 banks can operate simultaneously and independently (Component)
• Burst read/write operation
• Programmable burst length: 2, 4, 8
 Burst read stop capability
• Programmable burst sequence
 Sequential
 Interleave
• Start addressing capability
 Even and Odd
• Programmable /CAS latency (CL): 3, 3.5
• 8192 refresh cycles: 7.8s (8192/64ms)
• 2 variations of refresh
 Auto refresh
 Self refresh



Specifications

Parameter
Symbol
Value
Unit
Note
Voltage on any pin relative to VSS
VT
1.0 to +4.6
V
1
Supply voltage relative to VSS
VCC,VCCQ
1.0 to +4.6
V
1
Short circuit output current
Iout
50
mA
Power dissipation
PT
18.0
W
Operating temperature
Topr
0 to +55
°C
Storage temperature
Tstg
50 to +100
°C
Notes: 1. Respect to VSS.


Description

The HB54R1G9F2U is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in TCP package, 1 piece of PLL clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2k bits EEPROM) for Presence Detect (PD). Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2-bit prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. An outline of the HB54R1G9F2U is 184-pin socket type package (dual lead out). Therefore, it makes high density mounting possible without surface mount technology. HB54R1G9F2U provides common data inputs and outputs. Decoupling capacitors are mounted beside each TCP on the module board.

Note of HB54R1G9F2U: Do not push the cover or drop the modules in order to protect from mechanical defects, which would be electrical defects.




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