HB54A5129F1-A75B

Features:

• 184-pin socket type package (dual lead out) Outline: 133.35mm (Length) × 43.18 (Height) ×4.00mm (Thickness) Lead pitch: 1.27mm
• 2.5V power supply (VCC/VCCQ)
• SSTL-2 interface for all inputs and outputs
• Clock frequency: 143MHz/133MHz/125MHz (max.)
• Data inputs and outputs are synchronized with DQS
• 4 banks can operate simultaneously and independently (Component)
• Burst read/write operation
• Programmable burst length: 2, 4, 8 Burst read stop capability
• Programmable burst sequence Sequential Interleave
• Start addressing capability Even and Odd
• Programmable /CAS latency (CL): 3, 3.5
• 8192 refresh cycles: 7.8µs (8192/64ms)
• 2 variations of refresh Auto refresh Self refresh


Specifications

Parameter	Symbol	Value	Unit	Note
Voltage on any pin relative to VSS	VT	1.0 to +4.6	V	1
Supply voltage relative to VSS	VCC, VCCQ	1.0 to +4.6	V	1
Short circuit output current	IOUT	50	mA
Power dissipation	PT	18.0	W
Operating temperature	Topr	0 to +65
Storage temperature	Tstg	50 to +100

Description

The HB54A5129F1 is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2k bits EEPROM) for Presence Detect (PD). Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2-bit prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. An outline of HB54A5129F1 is 184-pin socket type package (dual lead out). Therefore, it makes high density mounting possible without surface mount technology. HB54A5129F1 provides common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the module board.