DescriptionThe HB54A5128FN is Double Data Rate (DDR) SDRAM Module, mounted 256M bits DDR SDRAM (HM5425801BTT) sealed in TSOP package,and 1 piece of serial EEPROM (2k bits EEPROM) for Presence Detect (PD).Read and write operations are performed at the cross points of the CK and the /CK. This high-s...
HB54A5128FN: DescriptionThe HB54A5128FN is Double Data Rate (DDR) SDRAM Module, mounted 256M bits DDR SDRAM (HM5425801BTT) sealed in TSOP package,and 1 piece of serial EEPROM (2k bits EEPROM) for Presence Detect...
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DescriptionThe HB54A1288KM is a 16M x 64 x 1 bank Double Data Rate (DDR) SDRAM Module, mounted 4 p...
DescriptionThe HB54A2568FM is Double Data Rate (DDR) SDRAM Module, mounted 256M bits DDR SDRAM (HM...
Features: • 200-pin socket type package (dual lead out) Outline: 67.6mm (Length) × 31.75mm (...
The HB54A5128FN is Double Data Rate (DDR) SDRAM Module, mounted 256M bits DDR SDRAM (HM5425801BTT) sealed in TSOP package,and 1 piece of serial EEPROM (2k bits EEPROM) for Presence Detect (PD).Read and write operations are performed at the cross points of the CK and the /CK. This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design. By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable. An outline of the products is 184-pin socket type package (dual lead out).Therefore, it makes high density mounting possible without surface mount technology. It provides common data inputs and outputs. Decoupling capacitors are mounted beside each TSOP on the module board.
Features of the HB54A5128FN are:(1)2.5V power supply (VCC/VCCQ); (2)SSTL-2 interface for all inputs and outputs; (3)clock frequency: 143MHz/133MHz/125MHz (max.); (4)data inputs, outputs and DM are synchronized with DQS; (5)4 banks can operate simultaneously and independently (Component); (6)burst read/write operation.No connection for CMOS devices input pins can be a cause of malfunction.If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc.,hence causing malfunction.CMOS devices behave differently than Bipolar or NMOS devices.
The absolute maximum ratings of the HB54A5128FN can be summarized as:(1)storage temperature range:-50 to 100;(2)voltage on any pin relative to VSS:-1.0 to 4.6V;(3)supply voltage relative to VSS:-1.0 to 4.6V;(4)operating temperature range:0 to 55;(5)short circuit output current:50mA;(6)power dissipation:8W.Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the HB54A5128FN is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product.