HB54A2569F1

DescriptionThe HB54A2569F1 is Double Data Rate (DDR) SDRAM Module, mounted 256M bits DDR SDRAM (HM5425801 BTT) sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2k bits EEPROM) for Presence Detect (PD).This high-speed data transfer is re...

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SeekIC No. : 004358859 Detail

HB54A2569F1: DescriptionThe HB54A2569F1 is Double Data Rate (DDR) SDRAM Module, mounted 256M bits DDR SDRAM (HM5425801 BTT) sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of register driver and 1 ...

floor Price/Ceiling Price

Part Number:
HB54A2569F1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Description

The HB54A2569F1 is Double Data Rate (DDR) SDRAM Module, mounted 256M bits DDR SDRAM (HM5425801 BTT) sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of register driver and 1 piece of serial EEPROM (2k bits EEPROM) for Presence Detect (PD).This high-speed data transfer is realized by the 2 bits prefetch-pipelined architecture. Data strobe (DQS) both for read and write are available for high speed and reliable data bus design.By setting extended mode register, the on-chip Delay Locked Loop (DLL) can be set enable or disable.An outline of the products is 184-pin socket type package (dual lead out). Therefore, it makes high density mounting possible without surface mount technology.  It provides common data inputs and outputs.Decoupling capacitors are  mounted  beside each TSOP on the module board.

Features of the HB54A2569F1 are:(1)2.5V power supply (VCC/VCCQ); (2)SSTL-2 interface for all inputs and outputs; (3)clock frequency: 143MHz/133MHz/125MHz (max.); (4)data inputs, outputs and DM are synchronized with DQS; (5)4 banks can operate simultaneously and independently (Component); (6)burst read/write operation.No connection for CMOS devices input pins can be a cause of malfunction.If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc.,hence causing  malfunction.CMOS devices behave differently than Bipolar or NMOS devices.

The absolute maximum ratings of the HB54A2569F1 can be summarized as:(1)storage temperature range:-50 to 100;(2)voltage on any pin relative to VSS:-1.0 to 4.6V;(3)supply voltage relative to VSS:-1.0 to 4.6V;(4)operating temperature range:0 to 55;(5)short circuit output current:50mA;(6)power dissipation:9W.Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory,  Inc.,  including the  maximum  ratings, operating  supply voltage  range,  heat  radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility  for failure  or damage when  HB54A2569F1 is  used  beyond the  guaranteed  ranges  and conditions.  Even within the guaranteed  ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product.




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