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HAT2265H-EL-E

MOSFET N-CH 30V 55A 5LFPAK

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SeekIC No. : 003432985 Detail

HAT2265H-EL-E: MOSFET N-CH 30V 55A 5LFPAK

HAT2265H-EL-E Data Sheet

floor Price/Ceiling Price

US $ .67~.67 / Piece | Get Latest Price
Part Number:
HAT2265H-EL-E
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2500
  • Unit Price
  • $.67
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 55A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5180pF @ 10V
Power - Max: 30W Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669 Supplier Device Package: 5-LFPAK    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 55A
Power - Max: 30W
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Supplier Device Package: 5-LFPAK
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds: 5180pF @ 10V


Parameters:

Technical/Catalog InformationHAT2265H-EL-E
VendorRenesas Technology America
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs3.3 mOhm @ 27.5, 10V
Input Capacitance (Ciss) @ Vds 5180pF @ 10V
Power - Max30W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs33nC @ 4.5V
Package / CaseLFPAK
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HAT2265H EL E
HAT2265HELE



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