HAT2198R

MOSFET N-CH 30V 14A 8-SOP

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SeekIC No. : 003433285 Detail

HAT2198R: MOSFET N-CH 30V 14A 8-SOP

floor Price/Ceiling Price

US $ .26~.26 / Piece | Get Latest Price
Part Number:
HAT2198R
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2500
  • Unit Price
  • $.26
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 14A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 9 mOhm @ 7A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 11nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1650pF @ 10V
Power - Max: 2.5W Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 11nC @ 4.5V
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 14A
Vgs(th) (Max) @ Id: -
Supplier Device Package: 8-SOP
Manufacturer: Renesas Electronics America
Rds On (Max) @ Id, Vgs: 9 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds: 1650pF @ 10V


Features:

• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 7.2 mΩ typ. (at VGS = 10 V)



Specifications

Item Symbol Ratings Unit
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAR Note 2
Pch Note3
ch-a Note3
Tch
Tstg
30
±20
14
112
14
14
19.6
2.5
50
150
55 to +150
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tch = 25°C, Rg 50 Ω
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s



Parameters:

Technical/Catalog InformationHAT2198R
VendorRenesas Technology America
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs9 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1650pF @ 10V
Power - Max2.5W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs11nC @ 4.5V
Package / Case8-SOP
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names HAT2198R
HAT2198R



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