HAT2174H

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25° C: 20A
Vgs(th) (Max) @ Id: -
Power - Max: 20W
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 10V
Gate Charge (Qg) @ Vgs: 33.5nC @ 10V
Input Capacitance (Ciss) @ Vds: 2280pF @ 10V


Parameters:

Technical/Catalog Information	HAT2174H
Vendor	Renesas Technology America
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	20A
Rds On (Max) @ Id, Vgs	27 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	2280pF @ 10V
Power - Max	20W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	33.5nC @ 10V
Package / Case	LFPAK
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HAT2174H HAT2174H