HAT2171H

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40V
Power - Max: 25W
Current - Continuous Drain (Id) @ 25° C: 40A
Vgs(th) (Max) @ Id: -
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
Gate Charge (Qg) @ Vgs: 52nC @ 10V
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Input Capacitance (Ciss) @ Vds: 3750pF @ 10V


Features:

• High speed switching
• Capable of 7 V gate drive
• Low drive current
• High density mounting
• Low on-resistance R _DS(on) = 3.8 mΩ typ. (at VGS = 10 V)


Specifications

Item	Symbol	Ratings	Unit
Drain to source voltage	VDSS	40	V
Gate to source voltage	VGSS	±20	V
Drain current	ID	40	A
Drain peak current	I D(pulse) Note1	160	A
Body-drain diode reverse drain current	IDR	40	A
Avalanche current	IAP Note 2	25	A
Avalanche energy	EAR Note 2	50	mJ
Channel dissipation	Pch Note3	25	W
Channel to Case Thermal Resistance	ch-C	5.0	°C/W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	55 to +150	°C

Parameters:

Technical/Catalog Information	HAT2171H
Vendor	Renesas Technology America
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	4.8 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds	3750pF @ 10V
Power - Max	25W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	52nC @ 10V
Package / Case	LFPAK
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HAT2171H HAT2171H