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HAT2171H-EL-E

MOSFET N-CH 40V 40A 5LFPAK

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SeekIC No. : 003432931 Detail

HAT2171H-EL-E: MOSFET N-CH 40V 40A 5LFPAK

HAT2171H-EL-E Data Sheet

floor Price/Ceiling Price

US $ .79~.79 / Piece | Get Latest Price
Part Number:
HAT2171H-EL-E
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~2500
  • Unit Price
  • $.79
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 40A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 52nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3750pF @ 10V
Power - Max: 25W Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669 Supplier Device Package: LFPAK    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40V
Power - Max: 25W
Current - Continuous Drain (Id) @ 25° C: 40A
Vgs(th) (Max) @ Id: -
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V
Gate Charge (Qg) @ Vgs: 52nC @ 10V
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Input Capacitance (Ciss) @ Vds: 3750pF @ 10V


Parameters:

Technical/Catalog InformationHAT2171H-EL-E
VendorRenesas Technology America
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs4.8 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 3750pF @ 10V
Power - Max25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs52nC @ 10V
Package / CaseLFPAK
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HAT2171H EL E
HAT2171HELE



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