HAT2170H

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25° C: 45A
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) @ Vgs: 62nC @ 10V
Power - Max: 30W
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 22.5A, 10V
Input Capacitance (Ciss) @ Vds: 4650pF @ 10V


Features:

• High speed switching
• Capable of 7 V gate drive
• Low drive current
• High density mounting
• Low on-resistance R_DS(on) = 3.3 m typ. (at VG_S = 10 V)


Specifications

Item	Symbol	Ratings	Unit
Drain to source voltage	VDSS	40	V
Gate to source voltage	VGSS	±20	V
Drain current	ID	45	A
Drain peak current	ID(pulse)Note1	180	A
Body-drain diode reverse drain current	IDR	45	A
Avalanche current	IAPNote2	30	A
Avalanche energy	EARNote2	72	mJ
Channel dissipation	PchNote3	30	W
Channel to Case Thermal Resistance	ch-C	4.17	/W
Channel temperature	Tch	150
Storage temperature	Tstg	55 to +150

Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25, Rg 50
3. Tc = 25