Features: • High speed switching• Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 6.3 m typ. (at VGS = 10 V)• Power Supply for Server and Telecom (Indoor use)Specifications Parameter Symbol Rating ...
HAT2168N: Features: • High speed switching• Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 6.3 m typ. (at VGS = 10 V)• P...
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Parameter | Symbol | Rating | Unit |
Drain to source voltage | VDSS | -30 | V |
Gate to source voltage | VGSS | ±20 | V |
Drain current | ID | 30 | A |
Drain peak current | ID(pulse) Note1 |
120 | A |
Body-drain diode reverse drain current | IDR | 30 | A |
Avalanche current HAT1047R HAT1047RJ |
IAP Note3 |
15 | A |
Avalanche energy HAT1047R HAT1047RJ |
EAR Note3 |
22 | mJ |
Channel dissipation | Pch Note2 | 15 | W |
Channel to case thermal resistance | ch-C | 8.33 | /W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | -55 to +150 |