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HAT2168H

Features: • High speed switching• Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V)Specifications Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate...

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HAT2168H: Features: • High speed switching• Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 6.0 m typ. (at VGS = 10 V)Specifica...

HAT2168H Data Sheet

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Part Number:
HAT2168H
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
  RDS(on) = 6.0 m typ. (at VGS = 10 V)


Specifications

Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
30
A
Drain peak current
ID(pulse)1
120
A
Body-drain diode reverse drain current
IDR
30
A
Avalanche current
IAP3
15
A
Avalanche energy
EAR3
22
mJ
Channel dissipation
Pch2
15
W
Channel to Case Thermal Resistance
ch-C
8.33
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
-55to+150
°C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc=25°C


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