Features: • High speed switching• Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V)Specifications Item Symbol Value Unit Drain to source voltage VDSS 30 V Drain to...
HAT2167N: Features: • High speed switching• Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V)Specifica...
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Item |
Symbol |
Value |
Unit |
Drain to source voltage |
VDSS |
30 |
V |
Drain to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
40 |
A |
Drain peak current |
ID(pulse) Note1 |
160 |
A |
Body-drain diode reverse drain current |
IDR |
40 |
A |
Avalanche current |
IAP Note2 |
20 |
A |
Avalanche energy |
EAR Note 2 |
40 |
mJ |
Channel dissipation |
Pch Note 3 |
20 |
W |
Channel to Case Thermal Resistance |
ch-C |
6.25 |
/W |
Channel temperature |
Tch |
150 |
|
Storage temperature |
Tstg |
55 to +150 |