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HAT2167N

Features: • High speed switching• Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V)Specifications Item Symbol Value Unit Drain to source voltage VDSS 30 V Drain to...

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HAT2167N: Features: • High speed switching• Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V)Specifica...

HAT2167N Data Sheet

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Part Number:
HAT2167N
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/27

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Product Details

Description



Features:

• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
   RDS(on) = 4.5 m typ. (at VGS = 10 V)


Specifications

Item
Symbol
Value
Unit
Drain to source voltage
VDSS
30
V
Drain to source voltage
VGSS
±20
V
Drain current
ID
40
A
Drain peak current
ID(pulse) Note1
160
A
Body-drain diode reverse drain current
IDR
40
A
Avalanche current
IAP Note2
20
A
Avalanche energy
EAR Note 2
40
mJ
Channel dissipation
Pch Note 3
20
W
Channel to Case Thermal Resistance
ch-C
6.25
/W
Channel temperature
Tch
150
Storage temperature
Tstg
55 to +150
Notes: 1. PW 10 s, duty cycle 1%
            2. Value at Tch = 25 , Rg 50
            3. Tc = 25



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