HAT2166H

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Power - Max: 25W
Current - Continuous Drain (Id) @ 25° C: 45A
Gate Charge (Qg) @ Vgs: 27nC @ 4.5V
Vgs(th) (Max) @ Id: -
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V
Input Capacitance (Ciss) @ Vds: 4400pF @ 10V


Features:

• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 2.9 m typ. (at VGS = 10 V)


Specifications

Drain to source voltage V_DSS ........................30 V
Gate to source voltage V_GSS ......................±20 V
Drain current I_D ..............................................45 A
Drain peak current I_D(pulse)........................ 180 A
Body-drain diode reverse drain current I_DR ...45 A
Avalanche current I_AP.................................... 25 A
Avalanche energy E_AR................................... 62.5 mJ
Channel dissipation Pch..................................25 W
Channel to Case Thermal Resistance _ch-C ...5.0 /W
Channel temperature Tch............................... 150
Storage temperature Tstg ...........................55 to +150