HAT2165N

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: -
Current - Continuous Drain (Id) @ 25° C: 55A
Power - Max: 30W
Manufacturer: Renesas Electronics America
Gate Charge (Qg) @ Vgs: 33nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 5180pF @ 10V
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V
Package / Case: 8-PowerSOIC (0.156", 3.95mm)
Supplier Device Package: 8-LFPAK-iV


Features:

• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 10 V)


Specifications

Item	Symbol	Ratings	Unit
Drain to Source voltage	VDSS	30	V
Gate to Source voltage	VGSS	±30	V
Drain current	ID	55	A
Drain peak current	ID (pulse)Note1	220	A
Body - Drain diode reverse drain current	IDR	55	A
Avalanche current	IAP Note2	30	A
Avalanche energy	EAR Note2	90	mJ
Channel dissipation	PchNote 3	30	W
Channel to case thermal impedance	ch-c	4.17	/W
Channel temperature	Tch	150
Storage temperature	Tstg	55 to +150

Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25
3. STch = 25, Tch 150


Parameters:

Technical/Catalog Information	HAT2165N
Vendor	Renesas Technology America
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	55A
Rds On (Max) @ Id, Vgs	3.6 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds	5180pF @ 10V
Power - Max	30W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	33nC @ 4.5V
Package / Case	LFPAK-i
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	HAT2165N HAT2165N