Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 60A
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) @ Vgs: 50nC @ 4.5V
Power - Max: 30W
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 7600pF @ 10V
Features: • Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 2.5 m typ. (at VGS = 10 V)Specifications
|
Item |
Symbol |
Ratings |
Unit |
| Drain to source voltage |
VDSS |
30 |
V |
| Gate to source voltage |
VGSS |
±20 |
V |
| Drain current |
ID |
60 |
A |
| Drain peak current |
ID(pulse)1 |
240 |
A |
| Body-drain diode reverse drain current |
IDR |
60 |
A |
| Avalanche current |
IAP3 |
30 |
A |
| Avalanche energy |
EAR3 |
90 |
mJ |
| Channel dissipation |
Pch2 |
30 |
W |
| Channel to Case Thermal Resistance |
ch-C |
4.17 |
°C/W |
| Channel temperature |
Tch |
150 |
°C |
| Storage temperature |
Tstg |
-55to+150 |
°C |
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tch = 25°C, Rg 50
3. Tc = 25°C
HAT2164H Data Sheet
