Position: Home  > All Categories> Integrated Circuits (ICs) > HAT2160N-EL-E

HAT2160N-EL-E

MOSFET N-CH 20V 60A LFPAKI

product image

HAT2160N-EL-E Picture
See larger image
SeekIC No. : 003433372 Detail

HAT2160N-EL-E: MOSFET N-CH 20V 60A LFPAKI

HAT2160N-EL-E Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
HAT2160N-EL-E
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/30

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 60A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 50nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 7600pF @ 10V
Power - Max: - Mounting Type: Surface Mount
Package / Case: 8-PowerSOIC (0.156", 3.95mm) Supplier Device Package: 8-LFPAK-iV    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 60A
Vgs(th) (Max) @ Id: -
Power - Max: -
Manufacturer: Renesas Electronics America
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 7600pF @ 10V
Package / Case: 8-PowerSOIC (0.156", 3.95mm)
Supplier Device Package: 8-LFPAK-iV


Parameters:

Technical/Catalog InformationHAT2160N-EL-E
VendorRenesas Technology America
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs3.1 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 7600pF @ 10V
Power - Max-
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseLFPAK-i
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HAT2160N EL E
HAT2160NELE



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Circuit Protection
A50QS75-4Y
F-17*77
Prototyping Products
AVT4168
DE1
View more