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HAT2160N-EL-E

MOSFET N-CH 20V 60A LFPAKI

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SeekIC No. : 003433372 Detail

HAT2160N-EL-E: MOSFET N-CH 20V 60A LFPAKI

HAT2160N-EL-E Data Sheet

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Part Number:
HAT2160N-EL-E
Mfg:
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Standard
Continuous Drain Current : 15 A Drain to Source Voltage (Vdss): 20V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 60A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: - Gate Charge (Qg) @ Vgs: 50nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 7600pF @ 10V
Power - Max: - Mounting Type: Surface Mount
Package / Case: 8-PowerSOIC (0.156", 3.95mm) Supplier Device Package: 8-LFPAK-iV    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
Packaging: Tape & Reel (TR)
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 60A
Vgs(th) (Max) @ Id: -
Power - Max: -
Manufacturer: Renesas Electronics America
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 7600pF @ 10V
Package / Case: 8-PowerSOIC (0.156", 3.95mm)
Supplier Device Package: 8-LFPAK-iV


Parameters:

Technical/Catalog InformationHAT2160N-EL-E
VendorRenesas Technology America
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs3.1 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 7600pF @ 10V
Power - Max-
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseLFPAK-i
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HAT2160N EL E
HAT2160NELE



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