HAT2160H

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 60A
Vgs(th) (Max) @ Id: -
Power - Max: 30W
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Gate Charge (Qg) @ Vgs: 54nC @ 4.5V
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 7750pF @ 10V


Features:

• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance RDS(on) = 2.1 m typ. (at VGS = 10 V)


Specifications

Item	Symbol	Value	Unit
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature	VDSS VGSS ID ID(pulse) IDR IAP EAR Pch Tch Tstg	20 ±20 60 240 60 30 90 30 150 55 to +150	V V A A A A mJ W °C °C