MOSFET N-CH 100V 15A LFPAK
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Item |
Symbol |
Ratings |
Unit | |
Drain to source voltage |
VDSS |
100 |
V | |
Gate to source voltage |
VGSS |
±20 |
V | |
Drain current |
ID |
15 |
A | |
Drain peak current |
ID(pulse)1 |
60 |
A | |
Body-drain diode reverse drain current |
IDR |
15 |
A | |
Avalanche current |
IAP3 |
15 |
A | |
Avalanche energy |
EAR3 |
22.5 |
mJ | |
Channel dissipation |
Pch2 |
20 |
W | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature |
Tstg |
-55to+150 |
°C |
Technical/Catalog Information | HAT2141H |
Vendor | Renesas Technology America |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 15A |
Rds On (Max) @ Id, Vgs | 27.5 mOhm @ 7.5A, 10V |
Input Capacitance (Ciss) @ Vds | 3200pF @ 10V |
Power - Max | 20W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 46nC @ 10V |
Package / Case | LFPAK |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | HAT2141H HAT2141H |