HAT2134H

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 60A
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) @ Vgs: 70nC @ 10V
Power - Max: 30W
Manufacturer: Renesas Electronics America
Package / Case: SC-100, SOT-669
Supplier Device Package: LFPAK
Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 4500pF @ 10V


Features:

• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
   R_{DS (on)} = 2.3 mΩ typ. (at V_GS = 10 V)


Specifications

Parameter	Symbol	Rating	Unit
Drain to source voltage	VDSS	20	V
Gate to Source Voltage	VGS	±20	V
Drain current	ID	60	A
Drain peak current	ID (pulse)Note 1	240	A
Body-drain diode reverse drain current	IDR	60	A
Avalanche current	IAP Note 3	20	A
Avalanche energy	EAR Note 3	40	mJ
Channel dissipation	Pch Note 2	30	W
Channel temperature	Tch	150
Storage temperature	Tstg	55 to +150

Notes: 1. PW 10 µs, duty cycle 1%
            2. Tc = 25
            3. Value at Tch = 25, R_g 50 Ω


Parameters:

Technical/Catalog Information	HAT2134H
Vendor	Renesas Technology America
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	60A
Rds On (Max) @ Id, Vgs	2.9 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds	4500pF @ 10V
Power - Max	30W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	LFPAK
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	HAT2134H HAT2134H