Features: • Low on-resistance• Capable of 4.5 V gate drive• High density mounting• Built-in Schottky Barrier DiodeSpecifications Item Symbol Ratings Unit MOS1 MOS2 & SBD Drain to source voltage VDSS 30 30 V Gate to source vo...
HAT2126RP: Features: • Low on-resistance• Capable of 4.5 V gate drive• High density mounting• Built-in Schottky Barrier DiodeSpecifications Item Symbol Ratings Unit ...
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Item |
Symbol |
Ratings |
Unit | |
MOS1 |
MOS2 & SBD | |||
Drain to source voltage |
VDSS |
30 |
30 |
V |
Gate to source voltage |
VGSS |
20 |
12 |
V |
Drain current |
ID |
12 |
16 |
A |
Drain peak current |
ID (pulse)Note 1 |
96 |
128 |
A |
Reverse drain current |
IDR |
12 |
16 |
A |
Channel dissipation |
Pch Note 2 |
2 |
3.5 |
W |
Channel temperature |
Tch |
150 |
150 |
|
Storage temperature |
Tstg |
55to+150 |
55to+150 |