HAT2126RP

Features: • Low on-resistance• Capable of 4.5 V gate drive• High density mounting• Built-in Schottky Barrier DiodeSpecifications Item Symbol Ratings Unit MOS1 MOS2 & SBD Drain to source voltage VDSS 30 30 V Gate to source vo...

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SeekIC No. : 004358683 Detail

HAT2126RP: Features: • Low on-resistance• Capable of 4.5 V gate drive• High density mounting• Built-in Schottky Barrier DiodeSpecifications Item Symbol Ratings Unit ...

floor Price/Ceiling Price

Part Number:
HAT2126RP
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• Built-in Schottky Barrier Diode



Specifications

Item
Symbol
Ratings
Unit
MOS1
MOS2 & SBD
Drain to source voltage
VDSS
30
30
V
Gate to source voltage
VGSS
20
12
V
Drain current
ID
12
16
A
Drain peak current
ID (pulse)Note 1
96
128
A
Reverse drain current
IDR
12
16
A
Channel dissipation
Pch Note 2
2
3.5
W
Channel temperature
Tch
150
150
Storage temperature
Tstg
55to+150
55to+150
Notes: 1. PW 10s, duty cycle 1 %
            2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s



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