Features: • Low on-resistance• Capable of 2.5 V gate drive• Low drive current• High density mountinSpecifications Parameter Symbol Value Unit Drain to source voltage VDSS 28 V Gate-to-Source Voltage VGSS ±12 V Drain current ID 11 A Drain peak cu...
HAT2108R: Features: • Low on-resistance• Capable of 2.5 V gate drive• Low drive current• High density mountinSpecifications Parameter Symbol Value Unit Drain to source volta...
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Parameter | Symbol | Value | Unit |
Drain to source voltage | VDSS | 28 | V |
Gate-to-Source Voltage | VGSS | ±12 | V |
Drain current | ID | 11 | A |
Drain peak current | IDpulse) Note 1 |
88 | A |
Body-drain diode reverse drain current | IDR | 11 | A |
Channel dissipation | PchNote 2 | 2 | W |
Channel dissipation | PchNote 3 | 3 | W |
Power Dissipation | Tch | 150 | |
Operating and Storage Temperature Range | Tstg | -55 to +150 |