Features: • Low on-resistance• Capable of 4 V gate drive• High density mountingSpecifications Item Symbol Value Unit Drain to source voltageGate to source voltageDrain currentDrain peak currentBody-drain diode reverse drain currentChannel dissipationChannel dis...
HAT2105T: Features: • Low on-resistance• Capable of 4 V gate drive• High density mountingSpecifications Item Symbol Value Unit Drain to source voltageGate to source voltag...
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Item |
Symbol |
Value |
Unit |
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature |
VDSS VGSS ID ID (pulse IDR Pch Pch Tch Tstg |
200 ±15 0.5 2 0.5 1 1.5 150 55 to +150 |
V V A A A W W °C °C |