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HAT2105R

Features: • Low on-resistance• Capable of 4 V gate drive• High density mountingSpecifications Item Symbol Value Unit Drain to source voltage VDSS 200 V Gate to source voltage VGSS ±15 V Drain current ID 0.5 A Drain peak current ID (pulse) Note 1 2 ...

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SeekIC No. : 004358676 Detail

HAT2105R: Features: • Low on-resistance• Capable of 4 V gate drive• High density mountingSpecifications Item Symbol Value Unit Drain to source voltage VDSS 200 V Gate to sou...

HAT2105R Data Sheet

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Part Number:
HAT2105R
Supply Ability:
5000

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Upload time: 2024/11/21

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Product Details

Description



Features:

• Low on-resistance
• Capable of 4 V gate drive
• High density mounting


Specifications

Item Symbol Value Unit
Drain to source voltage VDSS 200 V
Gate to source voltage VGSS ±15 V
Drain current ID 0.5 A
Drain peak current ID (pulse) Note 1 2 A
Body-drain diode reverse drain current IDR 0.5 A
Channel dissipation Pch Note2 1.3 W
Pch Note3 2 W
Channel temperature Tch 150 °C
Storage temperature Tstg 55 to +150 °C
Notes: 1. PW 10 s, duty cycle 1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s


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