Features: • Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS (on) = 2.9 m typ. (at VGS = 10 V)Specifications Item Symbol Value Unit Drain to source voltageGate to source voltageDrain currentDrain peak currentBod...
HAT2099H: Features: • Capable of 4.5 V gate drive• Low drive current• High density mounting• Low on-resistance RDS (on) = 2.9 m typ. (at VGS = 10 V)Specifications Item Symbol...
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Item |
Symbol |
Value |
Unit |
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature |
VDSS VGSS ID ID(pulse) IDR IAP EAR Pch Tch Tstg |
30 ±20 50 200 50 5 2.5 30 150 55 to +150 |
V V A A A A mJ W °C °C |