Features: • Low on-resistance• Capable of 1.5 V gate drive• Low drive current• High density mountingSpecifications Item Symbol Ratings Unit Drain to source voltageGate to source voltageDrain currentDrain peak currentBodydrain diode reverse drain current...
HAT2057RA: Features: • Low on-resistance• Capable of 1.5 V gate drive• Low drive current• High density mountingSpecifications Item Symbol Ratings Unit Drain to sour...
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Item |
Symbol |
Ratings |
Unit |
Drain to source voltage Gate to source voltage Drain current Drain peak current Bodydrain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature |
VDSS VGSS ID I D(pulse) Note1 IDR Pch Note2 Pch Note3 Tch Tstg |
20 +6,-3 4 32 4 2 3 150 55 to +150 |
V V A A A W W °C °C |
The HAT2057RA semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations of HAT2057RA include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself.