Features: · Low on-resistance· Capable of 4 V gate drive· Low drive current· High density mountingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 1 A Drain peak curr...
HAT2050T: Features: · Low on-resistance· Capable of 4 V gate drive· Low drive current· High density mountingSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 100 ...
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Item |
Symbol |
Ratings |
Unit | |
Drain to source voltage |
VDSS |
100 |
V | |
Gate to source voltage |
VGSS |
±20 |
V | |
Drain current |
ID |
1 |
A | |
Drain peak current |
ID(pulse)1 |
4 |
A | |
Body-drain diode reverse drain current |
IDR |
1 |
A | |
Channel dissipation |
Pch2 |
1.0 |
W | |
Channel dissipation |
Pch3 |
1.5 |
W | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature |
Tstg |
-55to+150 |
°C |